Effect of magnetic field on radial dopant segregation in crystal growth by traveling heater method

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dc.contributor.authorSadrhosseini, H.
dc.contributor.authorSezai, I.
dc.date.accessioned2026-02-06T18:39:34Z
dc.date.issued2010
dc.departmentDoğu Akdeniz Üniversitesi
dc.description.abstractA three dimensional time dependent computational model is developed to simulate the melt flow, heat transfer and the dopant transport during the growth of Si(1-x)Ge(x) semiconductor crystals by traveling heater method. The effect of static magnetic fields of different orientations on the radial and axial segregation of dopant is analyzed. It is observed that the flow oscillations are damped and flow becomes steady for both horizontal and vertical applied magnetic fields as the Hartmann number increases. It is found that there is an optimum value of Hartmann number beyond which little improvement in uniformity of concentration can be obtained at the growth interface. (C) 2010 Elsevier Masson SAS. All rights reserved.
dc.identifier.doi10.1016/j.ijthermalsci.2010.07.015
dc.identifier.endpage2427
dc.identifier.issn1290-0729
dc.identifier.issue12
dc.identifier.orcid0000-0002-3009-8374
dc.identifier.scopus2-s2.0-77957853198
dc.identifier.scopusqualityQ1
dc.identifier.startpage2419
dc.identifier.urihttps://doi.org/10.1016/j.ijthermalsci.2010.07.015
dc.identifier.urihttps://hdl.handle.net/11129/12931
dc.identifier.volume49
dc.identifier.wosWOS:000284135000020
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier France-Editions Scientifiques Medicales Elsevier
dc.relation.ispartofInternational Journal of Thermal Sciences
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260204
dc.subjectTraveling heater method
dc.subjectSi(1-x)Ge(x)
dc.subjectMagnetic field
dc.subjectSegregation
dc.subjectCrystal growth
dc.titleEffect of magnetic field on radial dopant segregation in crystal growth by traveling heater method
dc.typeArticle

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