EFFECT OF MAGNETIC FIELD ON RADIAL DOPANT SEGREGATION IN CRYSTAL GROWTH

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dc.contributor.authorSadrhosseini, H.
dc.contributor.authorSezai, I.
dc.date.accessioned2026-02-06T18:46:53Z
dc.date.issued2010
dc.departmentDoğu Akdeniz Üniversitesi
dc.description.abstractA three-dimensional time-dependent computational model is developed to simulate the melt flow and the dopant transport during the growth of Si1-xGex semiconductor crystals. The effect of static magnetic fields of different orientations on radial segregation of dopant is analyzed. It is observed that the flow oscillations are damped and flow becomes steady for both horizontal and vertical applied magnetic fields as the Hartman number increases. It is found that there is an optimum value of Hartman number for each Rayleigh number beyond which little or no improvement in uniformity of concentration can be obtained at the growth interface.
dc.identifier.doi10.1080/10407782.2010.490162
dc.identifier.endpage974
dc.identifier.issn1040-7782
dc.identifier.issn1521-0634
dc.identifier.issue12
dc.identifier.orcid0000-0002-3009-8374
dc.identifier.scopus2-s2.0-77953641732
dc.identifier.scopusqualityQ1
dc.identifier.startpage954
dc.identifier.urihttps://doi.org/10.1080/10407782.2010.490162
dc.identifier.urihttps://hdl.handle.net/11129/14140
dc.identifier.volume57
dc.identifier.wosWOS:000278669900004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTaylor & Francis Inc
dc.relation.ispartofNumerical Heat Transfer Part A-Applications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260204
dc.subject3-Dimensional Numerical-Simulation
dc.subjectTraveling Heater Method
dc.subjectConvection
dc.subjectFlow
dc.subjectMelt
dc.subjectCdte
dc.titleEFFECT OF MAGNETIC FIELD ON RADIAL DOPANT SEGREGATION IN CRYSTAL GROWTH
dc.typeArticle

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