PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM-WELLS
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Publisher
Akademie Verlag Gmbh
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info:eu-repo/semantics/closedAccess
Abstract
The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in finite-barrier GaAs/Ga1-xAlxAs quantum wells as well as the binding energy as a function of well width. The effect of a magnetic field is also considered.
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Physica Status Solidi B-Basic Research
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Volume
187
Issue
1
