PHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM-WELLS

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dc.contributor.authorILAIWI, KF
dc.contributor.authorELSAID, M
dc.date.accessioned2026-02-06T18:33:50Z
dc.date.issued1995
dc.departmentDoğu Akdeniz Üniversitesi
dc.description.abstractThe dependence of the photoionization cross-section on photon energy is calculated for shallow donors in finite-barrier GaAs/Ga1-xAlxAs quantum wells as well as the binding energy as a function of well width. The effect of a magnetic field is also considered.
dc.identifier.doi10.1002/pssb.2221870108
dc.identifier.endpage97
dc.identifier.issn0370-1972
dc.identifier.issue1
dc.identifier.orcid0000-0002-1392-3192
dc.identifier.scopus2-s2.0-84990642372
dc.identifier.scopusqualityQ3
dc.identifier.startpage93
dc.identifier.urihttps://doi.org/10.1002/pssb.2221870108
dc.identifier.urihttps://hdl.handle.net/11129/11506
dc.identifier.volume187
dc.identifier.wosWOS:A1995QD16400007
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAkademie Verlag Gmbh
dc.relation.ispartofPhysica Status Solidi B-Basic Research
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260204
dc.titlePHOTOIONIZATION OF SHALLOW DONOR IMPURITIES IN FINITE-BARRIER QUANTUM-WELLS
dc.typeArticle

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